Chin. J. Semicond. > 2002, Volume 23 > Issue 3 > 272-275
|

CONTENTS

电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔

徐少辉 , 熊祖洪 , 顾岚岚 , 柳毅 , 丁训民 and 侯晓远

+ Author Affiliations

PDF

Key words: 多孔硅, 微腔, 光致发光

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2034 Times PDF downloads: 1093 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 2002

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2002  >  23(3): 272-275
      徐少辉, 熊祖洪, 顾岚岚, 柳毅, 丁训民, 侯晓远. 电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔[J]. 半导体学报(英文版), 2002, 23(3): 272-275.
      Citation:
      徐少辉, 熊祖洪, 顾岚岚, 柳毅, 丁训民, 侯晓远. 电化学脉冲腐蚀法制备窄峰发射的多孔硅微腔[J]. 半导体学报(英文版), 2002, 23(3): 272-275.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return