Chin. J. Semicond. > 2005, Volume 26 > Issue 8 > 1577-1581
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Si(111)衬底上生长的GaN的形貌与AlN缓冲层生长温度的关系

朱军山 , 徐岳生 , 郭宝平 , 刘彩池 , 冯玉春 and 胡加辉

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Key words: MOCVD, GaN, 缓冲层

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(8): 1577-1581
      朱军山, 徐岳生, 郭宝平, 刘彩池, 冯玉春, 胡加辉. Si(111)衬底上生长的GaN的形貌与AlN缓冲层生长温度的关系[J]. 半导体学报(英文版), 2005, 26(8): 1577-1581.
      Citation:
      朱军山, 徐岳生, 郭宝平, 刘彩池, 冯玉春, 胡加辉. Si(111)衬底上生长的GaN的形貌与AlN缓冲层生长温度的关系[J]. 半导体学报(英文版), 2005, 26(8): 1577-1581.
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      • Received Date: 2015-08-18

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