| Citation: |
Li Zheyang, Dong Xun, Zhang Lan, Chen Gang, Bai Song, Chen Chen. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. Journal of Semiconductors, 2008, 29(7): 1347-1349.
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Li Z Y, Dong X, Zhang L, Chen G, Bai S, Chen C. Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD[J]. J. Semicond., 2008, 29(7): 1347.
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Epitaxial Growth on 4° Off-Oriented 75mm 4H-SiC Substrates by Horizontal Hot-Wall CVD
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Abstract
4H-SiC films were grown on 75mm Si-face n-type substrates 4° off-oriented towards the 〈1120〉 direction using a horizontal hot-wall CVD system.Optical and atomic force microscopy results revealed the main defects observed were typical 4° off-large carrots,triangles,and a few down-falls.The most observable feature was the step bunching.By optimizing the process conditions,a low sigma/mean(σ/mean) value of 4.37% and 1.81% in doping concentration and thickness uniformity were obtained on the epitaxy films,respectively.-
Keywords:
- horizontal hot-wall CVD,
- 4H-SiC,
- homoepitaxy,
- uniformity
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References
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Proportional views
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