Citation: |
Zhong Shichang, Chen Tangsheng. Ku-Band 20W GaAs Power PHEMT[J]. Journal of Semiconductors, 2006, 27(10): 1804-1807.
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Zhong S C, Chen T S. Ku-Band 20W GaAs Power PHEMT[J]. Chin. J. Semicond., 2006, 27(10): 1804.
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Ku-Band 20W GaAs Power PHEMT
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Abstract
A GaAs power PHEMT with a dielectric-assisted T-shaped gate is reported.The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing,and good process controllability and high yield can be achieved.GaAs power PHEMTs with a gate width of 19.2mm and Ku-band internally matched transistors with the combination of two chips are developed.The high power device demonstrates an output power of 20W with a power gain of 6dB and a typical power-added efficiency of 31% across the band of 14.0~14.5GHz.-
Keywords:
- T-shaped gate,
- GaAs,
- PHEMT,
- internal matching
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References
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Proportional views