Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots

Zheng Yuhong; Zhao Jianhua; Bi Jingfeng; Wang Weizhu; Deng Jiajun; Xia Jianba

Article Navigation > Journal of Semiconductors > 2007 > 28(S1): 211-214

Zheng Yuhong, Zhao Jianhua, Bi Jingfeng, Wang Weizhu, Deng Jiajun, Xia Jianba. Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots[J]. Journal of Semiconductors, 2007, 28(S1): 211-214. ****Zheng Y H, Zhao J H, Bi J F, Wang W Z, Deng J J, Xia J B. Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots[J]. Chin. J. Semicond., 2007, 28(S1): 211.

Citation:

Zheng Y H, Zhao J H, Bi J F, Wang W Z, Deng J J, Xia J B. Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots[J]. Chin. J. Semicond., 2007, 28(S1): 211.

Citation:

Zheng Y H, Zhao J H, Bi J F, Wang W Z, Deng J J, Xia J B. Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots[J]. Chin. J. Semicond., 2007, 28(S1): 211.

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Growth and Characterization of Diluted Magnetic Cr-Doped InAs Self-Organized Quantum Dots

State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China,State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China
Department of Physics，University of Science and Technology of China, Hefei 230026, China and State Key Laboratory for Superlattices and Microstructures，Institute of Semiconductors，Chinese Academy of Sciences，Beijing 100083，China

Received Date: 2016-05-27
Published Date: 2016-04-28

Abstract

Abstract

Cr-doped InAs self-organized ferromagnetic quantum dots(QDs)were grown on GaAs(001) substrate by low-temperature molecular·beam epitaxy.High-resolution transmission electron microscopy(HRTEM)analyses show that the I. nAs：Cr quantum。dots layers remain zinc blende structure well.Magnetic measurements demonstrate that the ferromagnetic transition temperature exceeds 400K in InAs：Cr self-organized ODs.
- diluted magnetic semiconductor

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