Chin. J. Semicond. > 1992, Volume 13 > Issue 12 > 721-728

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几种适用于VLSI离子注入新工艺的模型研究,

牛国富 and 阮刚

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(12): 721-728
      牛国富, 阮刚. 几种适用于VLSI离子注入新工艺的模型研究,[J]. 半导体学报(英文版), 1992, 13(12): 721-728.
      Citation:
      牛国富, 阮刚. 几种适用于VLSI离子注入新工艺的模型研究,[J]. 半导体学报(英文版), 1992, 13(12): 721-728.
      shu

      • Received Date: 2015-08-19

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