Chin. J. Semicond. > 2000, Volume 21 > Issue 6 > 564-569
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UHV/CVD外延生长SiGe/Si表面反应动力学

于卓 , 李代宗 , 成步文 , 黄昌俊 , 雷震霖 , 余金中 , 王启明 and 梁骏吾

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Key words: SiGe/Si, UHV/CVD, 生长, 动力学

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    Received: 20 August 2015 Revised: Online: Published: 01 June 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(6): 564-569
      于卓, 李代宗, 成步文, 黄昌俊, 雷震霖, 余金中, 王启明, 梁骏吾. UHV/CVD外延生长SiGe/Si表面反应动力学[J]. 半导体学报(英文版), 2000, 21(6): 564-569.
      Citation:
      于卓, 李代宗, 成步文, 黄昌俊, 雷震霖, 余金中, 王启明, 梁骏吾. UHV/CVD外延生长SiGe/Si表面反应动力学[J]. 半导体学报(英文版), 2000, 21(6): 564-569.
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      • Received Date: 2015-08-20

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