Chin. J. Semicond. > 1996, Volume 17 > Issue 5 > 396-400

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低压MOCVD外延生长InGaAsP／InP应变量子阱材料与器件应用

马骁宇，王树堂，熊飞克，郭良，王仲明，曾靖，王丽明，陈良惠

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    Received: 18 August 2015 Revised: Online: Published: 01 May 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(5): 396-400
      马骁宇，王树堂，熊飞克，郭良，王仲明，曾靖，王丽明，陈良惠. 低压MOCVD外延生长InGaAsP／InP应变量子阱材料与器件应用[J]. 半导体学报(英文版), 1996, 17(5): 396-400.
      Citation:
      马骁宇，王树堂，熊飞克，郭良，王仲明，曾靖，王丽明，陈良惠. 低压MOCVD外延生长InGaAsP／InP应变量子阱材料与器件应用[J]. 半导体学报(英文版), 1996, 17(5): 396-400.
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      • Received Date: 2015-08-18

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