Chin. J. Semicond. > 1992, Volume 13 > Issue 5 > 309-315
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CoSi_2中As~+和BF_2~+注入杂质再分布形成硅化物化浅结性能研究

徐立 , 张国炳 , 陈文茹 , 武国英 , 王阳元 and 龚里

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(5): 309-315
      徐立, 张国炳, 陈文茹, 武国英, 王阳元, 龚里. CoSi_2中As~+和BF_2~+注入杂质再分布形成硅化物化浅结性能研究[J]. 半导体学报(英文版), 1992, 13(5): 309-315.
      Citation:
      徐立, 张国炳, 陈文茹, 武国英, 王阳元, 龚里. CoSi_2中As~+和BF_2~+注入杂质再分布形成硅化物化浅结性能研究[J]. 半导体学报(英文版), 1992, 13(5): 309-315.
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      • Received Date: 2015-08-19

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