PAPERS
Gao Jinhuan, Yang Ruixia, Wu Yibin, Liu Yuewei, Shang Yaohui and Yang Kewu
Abstract: The research and fabrication of an InP-based AlAs/In0.53Ga0.47As double barrier single well resonant tunneling diode (RTD) device are reported.The material structure was grown on (001) semi-induction InP wafer by molecular beam epitaxy,and the device was fabricated with a mesa structure.The DC characteristics for the RTD sample were measured at room temperature.The peak-to-valley current ratio was 7.4,and the peak current density JP was 1.06e2A/cm2.
Key words: resonant tunneling diode, molecular beam epitaxy, mesa structure, InP substrate, peak-to-valley current ratio
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Received: 18 August 2015 Revised: 10 November 2006 Online: Published: 01 April 2007
| Citation: |
Gao Jinhuan, Yang Ruixia, Wu Yibin, Liu Yuewei, Shang Yaohui, Yang Kewu. Research on InP-Based AlAs/In0.53Ga0.47As RTD[J]. Journal of Semiconductors, 2007, 28(4): 573-575.
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Gao J, Yang R X, Wu Y B, Liu Y W, Shang Y, Yang K W. Research on InP-Based AlAs/In0.53Ga0.47As RTD[J]. Chin. J. Semicond., 2007, 28(4): 573.
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