Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 697-701
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Al含量对GaN/AlxGa1－xN量子点中激子态的影响

戴宪起 , 黄凤珍 and 郑冬梅

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Key words: 量子点, 自发极化和压电极化, 电子空穴复合率, 激子结合能

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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 697-701
      戴宪起, 黄凤珍, 郑冬梅. Al含量对GaN/AlxGa1－xN量子点中激子态的影响[J]. 半导体学报(英文版), 2005, 26(4): 697-701.
      Citation:
      戴宪起, 黄凤珍, 郑冬梅. Al含量对GaN/AlxGa1－xN量子点中激子态的影响[J]. 半导体学报(英文版), 2005, 26(4): 697-701.
      shu

      • Received Date: 2015-08-19

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