A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

Liu Jie; Zhou Jicheng; Luo Hongwei; Kong Xuedong; En Yunfei; Shi Qian; He Yujuan; Lin Li

Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China
National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Material Science and TeDepartment of Material Science and Te
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

Article Navigation > Journal of Semiconductors > 2008 > 29(1): 149-152

Liu Jie, Zhou Jicheng, Luo Hongwei, Kong Xuedong, En Yunfei, Shi Qian, He Yujuan, Lin Li. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. Journal of Semiconductors, 2008, 29(1): 149-152. ****Liu J, Zhou J C, Luo H W, Kong X D, En Y F, Shi Q, He Y J, Lin L. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. J. Semicond., 2008, 29(1): 149.

Citation:

Liu Jie, Zhou Jicheng, Luo Hongwei, Kong Xuedong, En Yunfei, Shi Qian, He Yujuan, Lin Li. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. Journal of Semiconductors, 2008, 29(1): 149-152. ****

Liu J, Zhou J C, Luo H W, Kong X D, En Y F, Shi Q, He Y J, Lin L. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. J. Semicond., 2008, 29(1): 149.

Citation:

Liu J, Zhou J C, Luo H W, Kong X D, En Y F, Shi Q, He Y J, Lin L. A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation[J]. J. Semicond., 2008, 29(1): 149.

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A Novel Back-Gate Kink Effect in SOI MOSFETs During Ionizing Irradiation

Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China
National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Material Science and Te
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China
Department of Physics Science and Technology,Zhongnan University,Changsha 410083,China National Key Laboratory for Reliability Physics and Application Technology of Electronic Components,CEPREI,Guangzhou 510610,China

Received Date: 2015-08-18
Accepted Date: 2007-06-17
Revised Date: 2007-08-13
Published Date: 2007-12-26

Abstract

Abstract

Total dose irradiation effects of partially depleted SOI MOSFETs are studied under 10keV X-ray exposure.Results show that the front-gate characteristics do not change significantly during irradiation.An anomalous kink is observed in the back-gate logarithmic curve of both nMOS and pMOS,which is attributed to charged traps at the buried oxide/top silicon (BOX/SOI) interface during irradiation.Two-dimensional numerical simulation using MEDICI supports this conclusion.
- X-ray,
- SOI MOSFETs,
- partially depleted,
- kink effect,
- total-dose irradiation

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