Chin. J. Semicond. > 2005, Volume 26 > Issue 8 > 1553-1557
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沉积温度对ａ-SiNx∶H薄膜PL峰的影响

刘渝珍 , 陈大鹏 , 王小波 and 董立军

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Key words: LPCVD, 纳米硅镶嵌结构, SiNx薄膜, 可见荧光

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    Received: 18 August 2015 Revised: Online: Published: 01 August 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(8): 1553-1557
      刘渝珍, 陈大鹏, 王小波, 董立军. 沉积温度对ａ-SiNx∶H薄膜PL峰的影响[J]. 半导体学报(英文版), 2005, 26(8): 1553-1557.
      Citation:
      刘渝珍, 陈大鹏, 王小波, 董立军. 沉积温度对ａ-SiNx∶H薄膜PL峰的影响[J]. 半导体学报(英文版), 2005, 26(8): 1553-1557.
      shu

      • Received Date: 2015-08-18

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