| Citation: |
Liu Yu'an, Yu Xiaoguang. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. Journal of Semiconductors, 2008, 29(7): 1263-1267.
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Liu Y, Yu X G. 1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress[J]. J. Semicond., 2008, 29(7): 1263.
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1/fγ Noise Characteristics of an n-MOSFET Under DC Hot Carrier Stress
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Abstract
The 1/fγ noise characteristic parameterSfγ model in an n-MOSFET under DC hot carrier stress is studied.A method characterizing the MOSFET abilities of an anti-hot carrier with noise parameter Sfγ is presented.The hot carrier degradation effect of n-MOSFET in high-,mid-,and low gate stresses and its 1/fγ noise feature are studied.Experimental results agree well with the developed model.-
Keywords:
- n-MOSFET,
- hot carrier,
- 1/fγ noise
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References
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Proportional views
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