| Citation: |
Zhao Yuhang, Hu Shaojian, Ren Zheng. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. Journal of Semiconductors, 2008, 29(4): 737-740.
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Zhao Y H, Hu S J, Ren Z. Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz[J]. J. Semicond., 2008, 29(4): 737.
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Accurate Parameter Extraction of Substrate Resistance in an RF CMOS Model Valid up to 20GHz
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Abstract
An accurate method to extract substrate resistances of RF MOSFETs is proposed.The extraction method is based on equivalent circuit analysis for the PSP model.This method is experimentally validated on 90nm CMOS technology and predicts the output characteristics of MOSFETs accurately up to 20GHz.-
Keywords:
- PSP model,
- RF modeling,
- RF MOSFETs,
- substrate resistance
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References
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Proportional views
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