Abstract: The main device parameter variations for UDSM processes are discussed briefly.Based on the "amplifying" idea,simple circuits for measuring the gate delay,dynamic power,leakage power,and their variations for a 90nm process are designed.A novel circuit that can get the gate delay variation curve for a UDSM process using shorter inverter link is presented.The circuits are fabricated using 90nm CMOS technology,and the variation curve for the 90nm CMOS process is obtained.The results show that the variation range is 178.6%,194.0% for dynamic power,and 19.5 times for leakage power.Thus the leakage power variation is the most serious.

Key words: ultra deep sub-micron, gate delay, dynamic power, leakage power