Chin. J. Semicond. > 1993, Volume 14 > Issue 10 > 644-647
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用红外吸收谱和俄歇谱研究氮化硅的成分和杂质

张秀淼 , 石国华 and 杨爱龄

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    Received: 20 August 2015 Revised: Online: Published: 01 October 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(10): 644-647
      张秀淼, 石国华, 杨爱龄. 用红外吸收谱和俄歇谱研究氮化硅的成分和杂质[J]. 半导体学报(英文版), 1993, 14(10): 644-647.
      Citation:
      张秀淼, 石国华, 杨爱龄. 用红外吸收谱和俄歇谱研究氮化硅的成分和杂质[J]. 半导体学报(英文版), 1993, 14(10): 644-647.
      shu

      • Received Date: 2015-08-20

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