| Citation: |
Lin Mi, Lü Weifeng, Sun Lingling. A Design for Triple-Valued NAND and NOR Gates Based on Resonant Tunneling Devices[J]. Journal of Semiconductors, 2007, 28(12): 1983-1987.
****
Lin M, Lü W, Sun L L. A Design for Triple-Valued NAND and NOR Gates Based on Resonant Tunneling Devices[J]. Chin. J. Semicond., 2007, 28(12): 1983.
|
A Design for Triple-Valued NAND and NOR Gates Based on Resonant Tunneling Devices
-
Abstract
The unique negative differential resistance characteristics lead the RT (resonant tunnel) devices to multiple-valued applications.In this paper,an RT switching circuit model is proposed,ternary NAND and NOR circuits are designed based on the switching sequence theory using RT devices,and they have correct logic certified by the SPICE simulation using MOS net model.This method can be used in other multiple-valued circuits design.-
Keywords:
- RT device,
- multiple-valued logic,
- switching sequence,
- NAND,
- NOR
-
References
-
Proportional views
DownLoad: