| Citation: |
JIANG Bo, HE Ping, TIAN Li-lin, LIN Xi. A Modified DSOI Device[J]. Journal of Semiconductors, 2002, 23(9): 966-971.
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JIANG Bo, HE Ping, TIAN Li-lin, LIN Xi, A Modified DSOI Device[J]. Journal of Semiconductors, 2002, 23(9), 966-971
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A Modified DSOI Device
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Abstract
A new device structure called DSOI (drain/source on insulator) is proposed to alleviate the thermal transfer problem and floating body effects in SOI (silicon on insulator) device.The purpose of present work is to modify DSOI structure to get the best device electrical capability.Simulation results approve that this modified structure has better electrical performance than prototype.-
Keywords:
- SOI,
- DSOI,
- simulation,
- MOSFET,
- device structure
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References
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Proportional views
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