Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 102-106
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基于刻蚀工艺的IC关键面积计算模型与实现方法

赵天绪 , 郝跃 and 马佩军

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Key words: 关键面积, 随机扰动, 缺陷

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 102-106
      赵天绪, 郝跃, 马佩军. 基于刻蚀工艺的IC关键面积计算模型与实现方法[J]. 半导体学报(英文版), 2002, 23(1): 102-106.
      Citation:
      赵天绪, 郝跃, 马佩军. 基于刻蚀工艺的IC关键面积计算模型与实现方法[J]. 半导体学报(英文版), 2002, 23(1): 102-106.
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      • Received Date: 2015-08-19

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