| Citation: |
Luo Weijun, Chen Xiaojuan, Liang Xiaoxin, Ma Xiaolin, Liu Xinyu, Wang Xiaoliang. A Radial Stub Test Circuit for Microwave Power Devices[J]. Journal of Semiconductors, 2006, 27(9): 1557-1561.
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Luo W J, Chen X J, Liang X X, Ma X L, Liu X Y, Wang X L. A Radial Stub Test Circuit for Microwave Power Devices[J]. Chin. J. Semicond., 2006, 27(9): 1557.
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A Radial Stub Test Circuit for Microwave Power Devices
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Abstract
With the principles of microwave circuits and semiconductor device physics,two microwave power device test circuits combined with a test fixture are designed and simulated,whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz.The simulation and experimental results verify that the test circuit with a radial stub is better than that without.As an example,a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture.With a 5.4GHz microwave input signal,the maximum gain is 8.75dB,and the maximum output power is 33.2dBm.-
Keywords:
- radial stub,
- test circuit,
- GaN,
- HEMT
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References
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Proportional views
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