Chin. J. Semicond. > 1989, Volume 10 > Issue 4 > 294-300
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快速热工艺氧化法生长超薄SiO_2层的研究

黄宜平 and C.A.Paz de Araujo

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(4): 294-300
      黄宜平, C.A.Paz de Araujo. 快速热工艺氧化法生长超薄SiO_2层的研究[J]. 半导体学报(英文版), 1989, 10(4): 294-300.
      Citation:
      黄宜平, C.A.Paz de Araujo. 快速热工艺氧化法生长超薄SiO_2层的研究[J]. 半导体学报(英文版), 1989, 10(4): 294-300.
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      • Received Date: 2015-08-19

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