Chin. J. Semicond. > 2001, Volume 22 > Issue 11 > 1474-1480

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一种新的等离子体边缘损伤的测量方法

朱志炜 , 郝跃 and 张进城

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Key words: 边缘损伤, 天线比, 电荷泵

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(11): 1474-1480
      朱志炜, 郝跃, 张进城. 一种新的等离子体边缘损伤的测量方法[J]. 半导体学报(英文版), 2001, 22(11): 1474-1480.
      Citation:
      朱志炜, 郝跃, 张进城. 一种新的等离子体边缘损伤的测量方法[J]. 半导体学报(英文版), 2001, 22(11): 1474-1480.
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      • Received Date: 2015-08-20

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