Chin. J. Semicond. > 1982, Volume 3 > Issue 1 > 45-54
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用MOS电容瞬态电流-电容法直接测定少数载流子的体产生寿命分布和表面产生速度

孙勤生

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1982

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      Article Navigation >  Journal of Semiconductors  > 1982  >  3(1): 45-54
      孙勤生. 用MOS电容瞬态电流-电容法直接测定少数载流子的体产生寿命分布和表面产生速度[J]. 半导体学报(英文版), 1982, 3(1): 45-54.
      Citation:
      孙勤生. 用MOS电容瞬态电流-电容法直接测定少数载流子的体产生寿命分布和表面产生速度[J]. 半导体学报(英文版), 1982, 3(1): 45-54.
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      • Received Date: 2015-08-20

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