Citation: |
Lü Changzhi, Feng Shiwei, Wang Dongfeng, Zhang Xiaoling, Xie Xuesong, He Yan, Zhang Hao, Xu Liguo, Yuan Mingwen, Li Xiaobai, Zeng Qingming. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure[J]. Journal of Semiconductors, 2005, 26(S1): 155-157.
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Lü C, Feng S W, Wang D F, Zhang X L, Xie X S, He Y, Zhang H, Xu L G, Yuan M W, Li X B, Zeng Q M. Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure[J]. Chin. J. Semicond., 2005, 26(13): 155.
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Characteristics Comparison of AlGaN/GaN HFET for Three Variant Vertical Structure
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Abstract
By the compared studies on the three AlGaN/GaN HFET structures with normal,inverted,and double hetero-structures,it is found that the normal structure is the most simple one and is easily controllable for layer growth.The characteristics of inverted structure are poorer than one with normal structure,and those characteristics with double hetero-structure are better than the ones with normal and inverted structure,but its layer growth is much more complicated.-
Keywords:
- AlGaN/GaN,
- HFET,
- inverted structure,
- double hetero-structure
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References
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Proportional views