Chin. J. Semicond. > 1993, Volume 14 > Issue 9 > 545-553
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MOS器件1/f噪声的双态系统理论──隧道模型与热激发模型的比较

方志豪 , 朱秋萍 , 黄银彪 and 鄢和平

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(9): 545-553
      方志豪, 朱秋萍, 黄银彪, 鄢和平. MOS器件1/f噪声的双态系统理论──隧道模型与热激发模型的比较[J]. 半导体学报(英文版), 1993, 14(9): 545-553.
      Citation:
      方志豪, 朱秋萍, 黄银彪, 鄢和平. MOS器件1/f噪声的双态系统理论──隧道模型与热激发模型的比较[J]. 半导体学报(英文版), 1993, 14(9): 545-553.
      shu

      • Received Date: 2015-08-20

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