| Citation: |
Jiang Hanqin, Ma Xiangyang, Yang Deren, Que Duanlin. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. Journal of Semiconductors, 2008, 29(10): 1984-1987.
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Jiang H Q, Ma X Y, Yang D R, Que D L. Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon[J]. J. Semicond., 2008, 29(10): 1984.
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Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon
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Abstract
The oxygen precipitation behaviors in conventional and nitrogen-doped Czochralski (NCZ) silicon subjected to the rapid thermal processing (RTP) at 1250℃ for 50s followed by the ramping anneal in different temperature intervals in the range from 600 to 1000℃ and isothermal annealing at 1000℃ are investigated. The results show that the RTP-induced vacancies enhance the nucleation of oxygen precipitates most significantly during the ramping anneal from 700 to 800℃ for conventional CZ silicon.Meanwhile,for NCZ silicon,the most significant vacancy-enhancement of nucleation of oxygen precipitates occurs during the ramping anneal from 800 to 900℃. Nitrogen is superior to vacancy for enhancement of oxygen precipitate nucleation at temperatures higher than 800℃. Furthermore,the internal gettering processes appropriate for CZ and NCZ silicon wafers based on the RTP and ramping anneal in the low temperature range are proposed.-
Keywords:
- Czochralski silicon,
- oxygen precipitation,
- nucleation,
- vacancy
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References
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Proportional views
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