Chin. J. Semicond. > 2000, Volume 21 > Issue 3 > 215-218

Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor

陈鹏 , 张荣 , 周玉刚 , 罗志云 , 谢世勇 , 陈志忠 , 李卫平 and 郑有炓

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Key words: GaN

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Received: 20 August 2015 Revised: Online: Published: 01 March 2000

Article Navigation > Journal of Semiconductors > 2000 > 21(3): 215-218

陈鹏, 张荣, 周玉刚, 罗志云, 谢世勇, 陈志忠, 李卫平, 郑有炓. Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor[J]. 半导体学报(英文版), 2000, 21(3): 215-218.

Citation:

陈鹏, 张荣, 周玉刚, 罗志云, 谢世勇, 陈志忠, 李卫平, 郑有炓. Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor[J]. 半导体学报(英文版), 2000, 21(3): 215-218.

陈鹏, 张荣, 周玉刚, 罗志云, 谢世勇, 陈志忠, 李卫平, 郑有炓. Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor[J]. 半导体学报(英文版), 2000, 21(3): 215-218.

Citation:

陈鹏, 张荣, 周玉刚, 罗志云, 谢世勇, 陈志忠, 李卫平, 郑有炓. Fabrication of Enhancement Mode GaN Metal- Insulator-Semiconductor Field Effect Transistor[J]. 半导体学报(英文版), 2000, 21(3): 215-218.

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