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任丙彦, 左燕, 霍秀敏, 励旭东, 王文静, 许颖, 赵玉文, 朱惠民, 傅洪波. 硅光单体电源铝背场吸杂对非平衡少子寿命的影响[J]. 半导体学报(英文版), 2004, 25(8): 942-945.
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CONTENTS
Key words: RTP, 氧沉淀, 少子寿命, 吸杂
Article views: 2231 Times PDF downloads: 1697 Times Cited by: 0 Times
Received: 19 August 2015 Revised: Online: Published: 01 August 2004
Citation: |
任丙彦, 左燕, 霍秀敏, 励旭东, 王文静, 许颖, 赵玉文, 朱惠民, 傅洪波. 硅光单体电源铝背场吸杂对非平衡少子寿命的影响[J]. 半导体学报(英文版), 2004, 25(8): 942-945.
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