Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 942-945
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硅光单体电源铝背场吸杂对非平衡少子寿命的影响

任丙彦 , 左燕 , 霍秀敏 , 励旭东 , 王文静 , 许颖 , 赵玉文 , 朱惠民 and 傅洪波

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Key words: RTP, 氧沉淀, 少子寿命, 吸杂

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 942-945
      任丙彦, 左燕, 霍秀敏, 励旭东, 王文静, 许颖, 赵玉文, 朱惠民, 傅洪波. 硅光单体电源铝背场吸杂对非平衡少子寿命的影响[J]. 半导体学报(英文版), 2004, 25(8): 942-945.
      Citation:
      任丙彦, 左燕, 霍秀敏, 励旭东, 王文静, 许颖, 赵玉文, 朱惠民, 傅洪波. 硅光单体电源铝背场吸杂对非平衡少子寿命的影响[J]. 半导体学报(英文版), 2004, 25(8): 942-945.
      shu

      • Received Date: 2015-08-19

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