Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 942-945
|

CONTENTS

硅光单体电源铝背场吸杂对非平衡少子寿命的影响

任丙彦 , 左燕 , 霍秀敏 , 励旭东 , 王文静 , 许颖 , 赵玉文 , 朱惠民 and 傅洪波

+ Author Affiliations

PDF

Key words: RTP, 氧沉淀, 少子寿命, 吸杂

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2178 Times PDF downloads: 1697 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 942-945
      任丙彦, 左燕, 霍秀敏, 励旭东, 王文静, 许颖, 赵玉文, 朱惠民, 傅洪波. 硅光单体电源铝背场吸杂对非平衡少子寿命的影响[J]. 半导体学报(英文版), 2004, 25(8): 942-945.
      Citation:
      任丙彦, 左燕, 霍秀敏, 励旭东, 王文静, 许颖, 赵玉文, 朱惠民, 傅洪波. 硅光单体电源铝背场吸杂对非平衡少子寿命的影响[J]. 半导体学报(英文版), 2004, 25(8): 942-945.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return