Citation: |
Zhang Jicai, Wang Jianfeng, Wang Yutian, Yang Hui. Strain State of AlGaN[J]. Journal of Semiconductors, 2005, 26(S1): 1-4.
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Zhang J C, Wang J F, Wang Y T, Yang H. Strain State of AlGaN[J]. Chin. J. Semicond., 2005, 26(13): 1.
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Strain State of AlGaN
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Abstract
The strain state of AlxGa1-xN layers grown on GaN template is studied by Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements.The results show that the coherent factor of AlxGa1-xN layers increases almost linearly when x≤0.42 and reaches to 30% when x=0.42.Above 0.42,the value varies slowly and equals to 0 when x=1(AlN).In this work the underlying GaN layer is in compressive strain,which results in the reduction of lattice misfit between GaN and AlxGa1-xN,and a AlxGa1-xN layer with the composition of about 0.16 might be grown on GaN coherently. -
References
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