Chin. J. Semicond. > 1993, Volume 14 > Issue 9 > 540-544
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用LPE生长1.35μm InGaAsP/InP量子阱结构的研究

邢启江 , 王舒民 , 王若鹏 , 陈娓兮 , 章蓓 , 赵沧桑 , 党小忠 and 虞丽生

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    Received: 20 August 2015 Revised: Online: Published: 01 September 1993

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      Article Navigation >  Journal of Semiconductors  > 1993  >  14(9): 540-544
      邢启江, 王舒民, 王若鹏, 陈娓兮, 章蓓, 赵沧桑, 党小忠, 虞丽生. 用LPE生长1.35μm InGaAsP/InP量子阱结构的研究[J]. 半导体学报(英文版), 1993, 14(9): 540-544.
      Citation:
      邢启江, 王舒民, 王若鹏, 陈娓兮, 章蓓, 赵沧桑, 党小忠, 虞丽生. 用LPE生长1.35μm InGaAsP/InP量子阱结构的研究[J]. 半导体学报(英文版), 1993, 14(9): 540-544.
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      • Received Date: 2015-08-20

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