Chin. J. Semicond. > 1995, Volume 16 > Issue 10 > 766-771

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1995

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      赵杰,刘宝钧,李建蒙. 硼离子注入半绝缘InP和N型InP的电特性研究[J]. 半导体学报(英文版), 1995, 16(10): 766-771.
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      赵杰,刘宝钧,李建蒙. 硼离子注入半绝缘InP和N型InP的电特性研究[J]. 半导体学报(英文版), 1995, 16(10): 766-771.

      • Received Date: 2015-08-19

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