| Citation: |
Zhou Bingqing, Zhu Meifang, Liu Fengzhen, Liu Jinlong, Gu Jinhua, Zhang Qunfang, Li Guohua, Ding Kun. High Rate Deposition of Device Quality Microcrystalline Si Transition Regime Films Using RF-PECVD[J]. Journal of Semiconductors, 2005, 26(S1): 98-101.
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Zhou B Q, Zhu M F, Liu F Z, Liu J L, Gu J H, Zhang Q F, Li G H, Ding K. High Rate Deposition of Device Quality Microcrystalline Si Transition Regime Films Using RF-PECVD[J]. Chin. J. Semicond., 2005, 26(13): 98.
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High Rate Deposition of Device Quality Microcrystalline Si Transition Regime Films Using RF-PECVD
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Abstract
The effects of deposition pressure,RF power,electrodes distance,hydrogen dilution datio, etc.on the deposition rate and electrical properties of microcrystalline Si thin films (μc-Si∶H) prepared by RF plasma enhanced chemical vapour deposition are studied.By optimizing the deposition parameters,the μc-Si∶H thin films with a deposition rate of 0.3～0.4nm/s are prepared which is near to the transition regime of from amorphous to microcrystalline The device quality μc-Si∶H thin films with dark conductivity of ～1e-7S/cm and the activation energy of 0.52eV show the good opto-electrical properties and compact structure.-
Keywords:
- microcrystalline silicon films,
- PECVD,
- high rate deposition
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References
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Proportional views
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