Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 991-994
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减小发射极宽度提高InGaP/GaAs HBT的性能

石瑞英 , 孙海峰 , 刘训春 , 袁志鹏 , 罗明雄 and 汪宁

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Key words: 自对准工艺, 减小发射极宽度, 提高InGaP/GaAsHBT的性能

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 991-994
      石瑞英, 孙海峰, 刘训春, 袁志鹏, 罗明雄, 汪宁. 减小发射极宽度提高InGaP/GaAs HBT的性能[J]. 半导体学报(英文版), 2004, 25(8): 991-994.
      Citation:
      石瑞英, 孙海峰, 刘训春, 袁志鹏, 罗明雄, 汪宁. 减小发射极宽度提高InGaP/GaAs HBT的性能[J]. 半导体学报(英文版), 2004, 25(8): 991-994.
      shu

      • Received Date: 2015-08-19

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