| Citation: |
Chuai Rongyan, Liu Xiaowei, Huo Mingxue, Song Minghao, Wang Xilian, Pan Huiyan. Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film[J]. Journal of Semiconductors, 2006, 27(7): 1230-1235.
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Chuai R Y, Liu X W, Huo M X, Song M H, Wang X L, Pan H Y. Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film[J]. Chin. J. Semicond., 2006, 27(7): 1230.
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Influence of Doping Level on the Gauge Factor of Polysilicon Nano-Film
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Abstract
For the purpose of aiding the development of effective MEMS strain sensors using polysilicon nano-film,we investigate the relationship between the B-doped concentration and the gauge factor of LPCVD-grown polysilicon nano-film and analyze the structure of the film via scanning electron photomicrographs and X-ray diffraction-spectra.Experiments show that under a heavy doping condition,the gauge factor of the nano-film is significantly larger than that of monocrystalline silicon with the same doping level,and when the doping concentration is around 2.5E20cm-3,the gauge factor of the film increases with the increase of the doping concentration.These results are explained by the tunneling effect.A modified model of piezoresistive properties for polysilicon is then presented constructively.-
Keywords:
- polysilicon,
- nano-film,
- piezoresistive property,
- tunnel effect,
- gauge factor
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References
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Proportional views
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