Chin. J. Semicond. > 1984, Volume 5 > Issue 1 > 7-15
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低剂量中子辐照氢气氛和氩气氛生长区熔硅的深能级瞬态谱研究

杜永昌 , 张玉峰 and 秦国刚

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1984

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      Article Navigation >  Journal of Semiconductors  > 1984  >  5(1): 7-15
      杜永昌, 张玉峰, 秦国刚. 低剂量中子辐照氢气氛和氩气氛生长区熔硅的深能级瞬态谱研究[J]. 半导体学报(英文版), 1984, 5(1): 7-15.
      Citation:
      杜永昌, 张玉峰, 秦国刚. 低剂量中子辐照氢气氛和氩气氛生长区熔硅的深能级瞬态谱研究[J]. 半导体学报(英文版), 1984, 5(1): 7-15.
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      • Received Date: 2015-08-20

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