Chin. J. Semicond. > 1990, Volume 11 > Issue 6 > 422-429
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GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析

郑宝真 , 许继宗 , 王丽明 , 徐仲英 and 朱龙德

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(6): 422-429
      郑宝真, 许继宗, 王丽明, 徐仲英, 朱龙德. GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析[J]. 半导体学报(英文版), 1990, 11(6): 422-429.
      Citation:
      郑宝真, 许继宗, 王丽明, 徐仲英, 朱龙德. GaAs/AlGaAs梯度折射率分别限制单量子阱结构中的光增益谱分析[J]. 半导体学报(英文版), 1990, 11(6): 422-429.
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      • Received Date: 2015-08-19

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