| Citation: |
Chen Gang. n-Type 4H-SiC Ohmic Contact[J]. Journal of Semiconductors, 2005, 26(S1): 273-276.
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Chen G. n-Type 4H-SiC Ohmic Contact[J]. Chin. J. Semicond., 2005, 26(13): 273.
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n-Type 4H-SiC Ohmic Contact
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Abstract
The difference of the characteristics of the NiCr/4H-SiC ohmic contact for different process conditions is studied.The condition for ohmic contact process is obtained,which is the base of the fabrication of the SiC MESFET devices.The process flow chart of ohmic contact is also introduced,and the specific contact resistivity is measured.The best result obtained for specific contact resistivity is ρc＝1.24e-5Ω·cm2,which is good enough for SiC MESFET devices.-
Keywords:
- SiC,
- ohmic contact,
- specific contact resistivity,
- MESFET,
- annealing
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References
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Proportional views
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