Chin. J. Semicond. > 1983, Volume 4 > Issue 6 > 593-595
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GD a-Si:(Cl,H)薄膜的ESR研究

廖显伯 , 杨喜荣 , 刘昌灵 , 孔光临 , 侯贵 and 徐广智

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1983

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      Article Navigation >  Journal of Semiconductors  > 1983  >  4(6): 593-595
      廖显伯, 杨喜荣, 刘昌灵, 孔光临, 侯贵, 徐广智. GD a-Si:(Cl,H)薄膜的ESR研究[J]. 半导体学报(英文版), 1983, 4(6): 593-595.
      Citation:
      廖显伯, 杨喜荣, 刘昌灵, 孔光临, 侯贵, 徐广智. GD a-Si:(Cl,H)薄膜的ESR研究[J]. 半导体学报(英文版), 1983, 4(6): 593-595.
      shu

      • Received Date: 2015-08-20

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