The 20th International Workshop on Junction Technology (IWJT2020) will be held on May 9 - 10, 2020 in Shenzhen, China.
As CMOS device continues scaling-down, source/drain junction engineering becomes one of the most critical issues for CMOS fabrication. To meet tremendous demand for sharing ideas on junction technology, International Workshop on Junction Technology started from 2000 and was held annually in Japan or China. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology, which makes the workshop a high-level scientific forum for experts in this field to exchange their ideas and information.
The main focus of IWJT-2020 is on junction technologies for nanometer CMOS devices, compound semiconductors, wide-bandgap semiconductors and two-dimensional semiconductors. The workshop will provide a good opportunity for researchers and engineers to present their new research results, share the latest information, keep pace with the rapid development of semiconductor technology, and exchange ideas with leading scientists in this field.
Workshop Scope
(Papers are solicited in, but not limited to the following areas)
Doping Technology --- Ion implantation, plasma doping, gas and solid doping
Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects
Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, FinFET(Tri-gate FET), and bonding junctions
Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment
Junction and Contact Technologies for Compound Semiconductors, 2D Semiconductors and Quantum Devices --- Schottky and ohmic contacts to compound semiconductors, junction and contact technologies for carbon nanotube, graphene, 2D material and other nano-, quantum devices, hetero-junction devices
Technologies for Wide Band-gap Semiconductor Devices --- Technologies for SiC, GaN, AlN, Ga2O3 and Ultra-wide bandgap semiconductors devices for optoelectronics, power electronics, MEMS, sensors, RF and 5G Mobile communication
Contact and Junction Technologies for Energy Harvesting Devices --- solar cells
Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction
Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS
Equipment, Materials and Substrates for Junction Technology
Paper Submission
Prospective authors are requested to submit the camera-ready full-length papers. Camera-ready full-length late news papers are also accepted. A notice of acceptance will be announced after review. The proceedings will have an IEEE catalogue number and may be collected in IEEE publication database----IEEE X’plore. The proceedings will be published before the workshop and distributed at the workshop.
Important Dates
Deadline for Full-Length Paper Submission: Mar. 15, 2020
Notification of Acceptance: Mar. 31, 2020
Deadline for Late News Submission: Mar. 31, 2020
Email submission with a cover letter to iwjt2020@sustech.edu.cn is preferred.
Please use the first author or corresponding author’s name as a filename, eg., authorname.doc or authorname.pdf.
About paper submission, please contact:
Prof. Huaiyu YE
School of Microelectronics
Southern University of Science and Technology
Shenzhen 518055, China
E-mail: yehy@sustech.edu.cn
More information about IWJT-2020 can be found at web site: https://sme.sustech.edu.cn/index/huiyi/index
