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Binding Energies of Screened Excitons in a Strained (111)-Oriented Zinc-Blende GaN/AlGaN Quantum Well Under Hydrostatic Pressure.
J. Semicond.,
2008, 29(2): 234.
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Ding Zhaohua, Zhao Cuilan, Xiao Jinglin.
Temperature Dependences of Polaron in a Parabolic Quantum Wire.
J. Semicond.,
2006, 27(S1): 54.
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Xue Yaguang, Yan Zuwei, Huangfu Yanfang.
Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect.
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Physical properties of spray deposited CdTe thin films: PEC performance.
J. Semicond.,
2011, 32(3): 033001.
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M. Tiotsop, A. J. Fotue, S. C. Kenfack, N. Issofa, A. V. Wirngo, M. P. Tabue Djemmo, H. Fotsin, L. C. Fai.
Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot.
J. Semicond.,
2015, 36(10): 102001.
doi: 10.1088/1674-4926/36/10/102001
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Zhu Jun, Ban Shiliang, Ha Sihua.
Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells.
J. Semicond.,
2011, 32(11): 112002.
doi: 10.1088/1674-4926/32/11/112002
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Wen Shumin, Ban Shiliang.
Influence of Polaronic Effect on Binding Energies of Donors in Quantum Wells with Finite Barriers Under Hydrostatic Pressure.
J. Semicond.,
2007, 28(6): 848.
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Wen Shumin, Ban Shiliang.
Screening Influence on Binding Energies of Donors in Quantum Wells with Finite Barriers Under Hydrostatic Pressure.
J. Semicond.,
2006, 27(1): 63.
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Xinjun Ma, Boyu Xiao, Yong Sun, Jinlin Xiao.
Effects of magnetic field on the polaron in an asymmetrical Gaussian confinement potential quantum well.
J. Semicond.,
2015, 36(10): 102004.
doi: 10.1088/1674-4926/36/10/102004
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Wei Xiao, Jinglin Xiao.
The energy-level and vibrational frequency properties of a polaron weak-coupled in a quantum well with asymmetrical Gaussian confinement potential.
J. Semicond.,
2019, 40(4): 042901.
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Li Weiping, Xiao Jinglin.
Influence of Coulomb Potential on the Properties of a Polaron in a Quantum Dot.
J. Semicond.,
2007, 28(8): 1187.
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Jiwen Yin, Weiping Li, Yifu Yu.
Properties of a polaron in a quantum dot:a squeezed-state variational approach.
J. Semicond.,
2013, 34(1): 012001.
doi: 10.1088/1674-4926/34/1/012001
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A. Menani, L. Dehimi, S. Dehimi, F. Pezzimenti.
Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode.
J. Semicond.,
2020, 41(6): 062301.
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Zhang Min, Ban Shiliang.
Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field.
J. Semicond.,
2010, 31(5): 052002.
doi: 10.1088/1674-4926/31/5/052002
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Yan Liu, Jing Yan, Hongjuan Wang, Genquan Han.
Temperature dependent IDS-VGS characteristics of an N-channel Si tunneling field-effect transistor with a germanium source on Si(110) substrate.
J. Semicond.,
2014, 35(2): 024001.
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Chen Liu, Yuming Zhang, Yimen Zhang, Hongliang Lü, Bin Lu.
Temperature dependent interfacial and electrical characteristics during atomic layer deposition and annealing of HfO2 films in p-GaAs metal-oxide-semiconductor capacitors.
J. Semicond.,
2015, 36(12): 124003.
doi: 10.1088/1674-4926/36/12/124003
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Li Meizhi, Chen Xingbi.
Influence of Gate Voltages on Temperature of LDMOS Under Ultra-High Transient Currents.
J. Semicond.,
2007, 28(8): 1256.
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Wang Guiwen, Xiao Jinglin.
Frequency of the transition spectral line of an electron in quantum rods.
J. Semicond.,
2010, 31(9): 092002.
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A. Resfa, Bourzig Y Smahi, Brahimi R Menezla.
Study and modeling of the transport mechanism in a Schottky diode on the basis of a GaAs semiinsulator.
J. Semicond.,
2011, 32(12): 124001.
doi: 10.1088/1674-4926/32/12/124001
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Sanjeet Kumar Sinha, Saurabh Chaudhury.
Comparative study of leakage power in CNTFET over MOSFET device.
J. Semicond.,
2014, 35(11): 114002.
doi: 10.1088/1674-4926/35/11/114002
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