J. Semicond. > Volume 30 > Issue 3 > Article Number: 032001

Temperature effects on interface polarons in a strained (111)-oriented zinc-blende GaN/AlGaN heterojunction under pressure

Zhang Min and Ban Shiliang

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Abstract: The properties of interface polarons in a strained (111)-oriented zinc-blende GaN/AlxGa1-xN heterojunction at finite temperature under hydrostatic pressure are investigated by adopting a modified LLP variational method and a simplified coherent potential approximation. Considering the effect of hydrostatic pressure on the bulk longitudinal optical phonon mode, two branches interface-optical phonon modes and strain, respectively, we calculated the polaronic self-trapping energy and effective mass as functions of temperature, pressure and areal electron density. The numerical result shows that both of them near linearly increase with pressure but the self-trapping energies are nonlinear monotone increasing with increasing of the areal electron density. They are near constants below a range of temperature whereas decrease dramatically with increasing temperature beyond the range. The contributions from the bulk longitudinal optical phonon mode and one branch of interface optical phonon mode with higher frequency are important whereas the contribution from another branch of interface optical phonon mode with lower frequency is extremely small so that it can be neglected in the further discussion.

Key words: polaronstrained zinc-blende heterojunctiontemperaturepressure


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Zhang M, Ban S L. Temperature effects on interface polarons in a strained (111)-oriented zinc-blende GaN/AlGaN heterojunction under pressure[J]. J. Semicond., 2009, 30(3): 032001. doi: 10.1088/1674-4926/30/3/032001.

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Manuscript received: 18 August 2015 Manuscript revised: 26 August 2008 Online: Published: 01 March 2009

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