J. Semicond. > Volume 30 > Issue 3 > Article Number: 033001

Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors

Zhu Xiaming , Wu Huizhen , Wang Shuangjiang , Zhang Yingying , Cai Chunfeng , Si Jianxiao , Yuan Zijian , Du Xiaoyang and Dong Shurong

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Abstract: Using NH3 as nitrogen source gas, N-doped ZnO (ZnO:N) thin films in c-axis orientation were deposited on glass substrates by radio frequency magnetron sputtering at room temperature. The ZnO:N thin films display significant increase of resistivity and decrease of photoluminescence intensity. As-grown ZnO:N material was used as active channel layer and Si3N4 was used as gate insulator to fabricate thin-film transistor. The fabricated devices on glasses demonstrate typical field effect transistor characteristics.

Key words: ZnO N-doping resistivity photoluminescence thin film transistors

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Zhu X M, Wu H Z, Wang S J, Zhang Y Y, Cai C F, Si J X, Yuan Z J, Du X Y, Dong S R. Optical and electrical properties of N-doped ZnO and fabrication of thin-film transistors[J]. J. Semicond., 2009, 30(3): 033001. doi: 10.1088/1674-4926/30/3/033001.

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History

Manuscript received: 18 August 2015 Manuscript revised: 29 September 2008 Online: Published: 01 March 2009

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