J. Semicond. > Volume 30 > Issue 7 > Article Number: 075001

Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

Yu Bo , Wang Yuan , Jia Song and Zhang Ganggang

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Abstract: This paper presents a novel mixed-voltage I/O buffer without an extra dual-oxide CMOS process. This mixed-voltage I/O buffer with a simplified circuit scheme can overcome the problems of leakage current and gate-oxide reliability that the conventional CMOS I/O buffer has. The design is realized in a 0.13-μm CMOS process and the simulation results show a good performance increased by ~34% with respect to the product of power consumption and speed.

Key words: mixed-voltage I/O buffer multi-power domain thin-oxide CMOS

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Yu B, Wang Y, Jia S, Zhang G G. Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors[J]. J. Semicond., 2009, 30(7): 075001. doi: 10.1088/1674-4926/30/7/075001.

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History

Manuscript received: 18 August 2015 Manuscript revised: 06 March 2009 Online: Published: 01 July 2009

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