J. Semicond. > Volume 31 > Issue 9 > Article Number: 094008

Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT

Huang Jie , Guo Tianyi , Zhang Haiying , Xu Jingbo , Fu Xiaojun , Yang Hao and Niu Jiebin

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Abstract: A new PMMA/PMGI/ZEP520/PMGI four-layer resistor electron beam lithography technology is successfully developed and used to fabricate a 120 nm gate-length lattice-matched In0.53Ga0.47As/In0.52Al0.48As InP-based HEMT, of which the material structure is successfully designed and optimized by our group. A 980 nm ultra-wide T-gate head, which is nearly as wide as 8 times the gatefoot (120 nm), is successfully obtained, and the excellent T-gate profile greatly reduces the parasitic resistance and capacitance effect and effectively enhances the RF performances. These fabricated devices demonstrate excellent DC and RF performances such as a maximum current gain frequency of 190 GHz and a unilateral power-gain gain frequency of 146 GHz.

Key words: HEMTInPInGaAs/InAlAscutoff frequency

[1]

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[2]

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Huang J, Guo T Y, Zhang H Y, Xu J B, Fu X J, Yang H, Niu J B. Fabrication of a 120 nm gate-length lattice-matched InGaAs/InAlAsInP-based HEMT[J]. J. Semicond., 2010, 31(9): 094008. doi: 10.1088/1674-4926/31/9/094008.

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History

Manuscript received: 18 August 2015 Manuscript revised: Online: Published: 01 September 2010

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