J. Semicond. > Volume 32 > Issue 12 > Article Number: 124002

Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing

Liu Jun , Sun Lingling and Marissa Condon

+ Author Affiliations + Find other works by these authors

PDF

Abstract: This paper investigates the effect of a non-uniform gate-finger spacing layout structure on the avalanche breakdown performance of RF CMOS technology. Compared with a standard multi-finger device with uniform gate-finger spacing, a device with non-uniform gate-finger spacing represents an improvement of 8.5% for the drain-source breakdown voltage (BVds) and of 20% for the thermally-related drain conductance. A novel compact model is proposed to accurately predict the variation of BV_ds with the total area of devices, which is dependent on the different finger spacing sizes. The model is verified and validated by the excellent match between the measured and simulated avalanche breakdown characteristics for a set of uniform and non-uniform gate-finger spacing arranged nMOSFETs.

Key words: non-uniformgate-finger spacingavalanche breakdownRF CMOS

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]

Search

Advanced Search >>

GET CITATION

Liu J, Sun L L, M Condon. Investigation and modeling of the avalanche effect in MOSFETs with non-uniform finger spacing[J]. J. Semicond., 2011, 32(12): 124002. doi: 10.1088/1674-4926/32/12/124002.

Export: BibTex EndNote

Article Metrics

Article views: 2953 Times PDF downloads: 1954 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: 05 August 2011 Online: Published: 01 December 2011

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误