J. Semicond. > Volume 32 > Issue 3 > Article Number: 036001

MOS structure fabrication by thermal oxidation of multilayer metal thin films

Mohammad Orvatinia and Atefeh Chahkoutahi

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Abstract: A novel approach for the fabrication of a metal oxide semiconductor (MOS) structure was reported. The process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel–chromium alloy. This two-layer structure was thermally oxidized at 400 ℃ for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic substrate. Using deposition parameters, device dimensions and SEM micrographs of the layers, the device parameters were calculated. The resultant MOS structure was characterized by a CV curve method. From this curve, the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and –2.9 V, respectively, which are in the order of model-based calculations.

Key words: MOS structure


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M Orvatinia, A Chahkoutahi. MOS structure fabrication by thermal oxidation of multilayer metal thin films[J]. J. Semicond., 2011, 32(3): 036001. doi: 10.1088/1674-4926/32/3/036001.

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Manuscript received: Manuscript revised: 27 October 2010 Online: Published: 01 March 2011

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