J. Semicond. > Volume 32 > Issue 6 > Article Number: 062003

Bound polaron in a strained wurtzite GaN/AlxGa1-xN cylindrical quantum dot

Zhang Bin , Yan Zuwei and Zhang Min

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Abstract: Within the effective-mass approximation, a variational method is adopted to investigate the polaron effect in a strained GaN/AlxGa1-xN cylindrical quantum dot. The electron couples with both branches of longitudinal optical-like (LO-like) and transverse optical-like (TO-like) phonons and the built-in electric field are taken into account. The numerical results show that the binding energy of the bound polaron is reduced obviously by the polaron effect on the impurity states. Furthermore, the contribution of LO-like phonons to the binding energy is dominant, and the anisotropic angle and Al content influence on the binding energy are small.

Key words: quantum dot

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Zhang B, Yan Z W, Zhang M. Bound polaron in a strained wurtzite GaN/AlxGa1-xN cylindrical quantum dot[J]. J. Semicond., 2011, 32(6): 062003. doi: 10.1088/1674-4926/32/6/062003.

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Manuscript received: 18 August 2015 Manuscript revised: 07 February 2011 Online: Published: 01 June 2011

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