J. Semicond. > Volume 33 > Issue 1 > Article Number: 012001

Effect of rhenium doping on various physical properties of single crystals of MoSe2

Mihir M. Vora and Aditya M. Vora

+ Author Affiliations + Find other works by these authors

PDF

Abstract: Effect of rhenium doping is examined in single crystals of MoSe2 viz. MoRe0.005Se1.995, MoRe0.001Se1.999 and Mo0.995Re0.005Se2, which is grown by using the direct vapor transport (DVT) technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power (TEP) measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials.

Key words: structural propertieselectrical propertiesoptical propertiessingle crystals

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[1]

Sonet Kumar Saha, M. Azizar Rahman, M. R. H. Sarkar, M. Shahjahan, M. K. R. Khan. Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films. J. Semicond., 2015, 36(3): 033004. doi: 10.1088/1674-4926/36/3/033004

[2]

Yao Zhaohui, Chen Tingjin, Xia Chaofeng, Yuan Hairong, Liu Zuming, Liao Hua, Wang Fan. Structural and Optical Properties of CdTe Thin Films on Glass Grown by Hot Wall Vacuum Deposition. J. Semicond., 2006, 27(7): 1236.

[3]

Liu Wei, Cheng Shuying. Photoelectric properties of ITO thin films deposited by DC magnetron sputtering. J. Semicond., 2011, 32(1): 013002. doi: 10.1088/1674-4926/32/1/013002

[4]

Pengfei Wang, Ruihua Nan, Zengyun Jian. The effects of deep-level defects on the electrical properties of Cd0.9Zn0.1Te crystals. J. Semicond., 2017, 38(6): 062002. doi: 10.1088/1674-4926/38/6/062002

[5]

Soumaia Djaadi, Kamal Eddine Aiadi, Sofiane Mahtout. First principles study of structural, electronic and magnetic properties of SnGen(0, ±1) (n = 1–17) clusters. J. Semicond., 2018, 39(4): 042001. doi: 10.1088/1674-4926/39/4/042001

[6]

P Mallika Bramaramba Devi, G. Phaneendra Reddy, K. T. Ramakrishna Reddy. Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application. J. Semicond., 2019, 40(5): 052101. doi: 10.1088/1674-4926/40/5/052101

[7]

Shengnan Zhang, Xiaozheng Lian, Yanchao Ma, Weidan Liu, Yingwu Zhang, Yongkuan Xu, Hongjuan Cheng. Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method. J. Semicond., 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003

[8]

M. Benaida, K. E. Aiadi, S. Mahtout, S. Djaadi, W. Rammal, M. Harb. Growth behavior and electronic properties of Gen + 1 and AsGen (n = 1–20) clusters: a DFT study. J. Semicond., 2019, 40(3): 032101. doi: 10.1088/1674-4926/40/3/032101

[9]

Shuxin Tan, Takashi Egawa. Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors. J. Semicond., 2019, 40(4): 042801. doi: 10.1088/1674-4926/40/4/042801

[10]

G. Nagaraju, K. Ravindranatha Reddy, V. Rajagopal Reddy. Electrical transport and current properties of rare-earth dysprosium Schottky electrode on p-type GaN at various annealing temperatures. J. Semicond., 2017, 38(11): 114001. doi: 10.1088/1674-4926/38/11/114001

[11]

Jiaming Luo, Min Guan, Yang Zhang, Liqiang Chen, Yiping Zeng. The influence of MBE and device structure on the electrical properties of GaAs HEMT biosensors. J. Semicond., 2018, 39(12): 124007. doi: 10.1088/1674-4926/39/12/124007

[12]

Wanjun Yan, Chunhong Zhang, Zhongzheng Zhang, Quan Xie, Benhua Guo, Shiyun Zhou. The optical-electrical properties of doped β-FeSi2. J. Semicond., 2013, 34(10): 103003. doi: 10.1088/1674-4926/34/10/103003

[13]

Guili Liu, Yan Jiang, Yuanyuan Song, Shuang Zhou, Tianshuang Wang. Influence of tension-twisting deformations and defects on optical and electrical properties of B, N doped carbon nanotube superlattices. J. Semicond., 2016, 37(6): 063004. doi: 10.1088/1674-4926/37/6/063004

[14]

Jiuxu Song, Yintang Yang, Ping Wang, Lixin Guo, Zhiyong Zhang. Electronic structures and optical properties of a SiC nanotube with vacancy defects. J. Semicond., 2013, 34(2): 022001. doi: 10.1088/1674-4926/34/2/022001

[15]

J.V. Thombare, M.C. Rath, S.H. Han, V.J. Fulari. The influence of monomer concentration on the optical properties of electrochemically synthesized polypyrrole thin films. J. Semicond., 2013, 34(10): 103002. doi: 10.1088/1674-4926/34/10/103002

[16]

Zheng Yongping, Chen Zhigao, Lu Yu, Wu Qingyun, Weng Zhenzhen, Huang Zhigao. Influence of Be-Doping on Electronic Structure and Optical Properties of ZnO. J. Semicond., 2008, 29(12): 2316.

[17]

Rahul Kumar, Parag Bhargava, Ritu Srivastava, Priyanka Tyagi. Synthesis and electroluminescence properties of tris-[5-choloro-8-hydroxyquinoline] aluminum Al(5-Clq)3. J. Semicond., 2015, 36(6): 064001. doi: 10.1088/1674-4926/36/6/064001

[18]

Yan Wanjun, Xie Quan. First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors. J. Semicond., 2008, 29(6): 1141.

[19]

Zhao Zongyan, Liu Qingju, Zhu Zhongqi, Zhang Jin. First-Principles Calculation of Electronic Structure and Optical Properties of Anatase TiO2. J. Semicond., 2007, 28(10): 1555.

[20]

Wang Li, Pu Yong, Fang Wenqing, Mo Chunlan, Xiong Chuanbing, Jiang Fengyi. Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD. J. Semicond., 2003, 24(3): 409.

Search

Advanced Search >>

GET CITATION

M M Vora, A M Vora. Effect of rhenium doping on various physical properties of single crystals of MoSe2[J]. J. Semicond., 2012, 33(1): 012001. doi: 10.1088/1674-4926/33/1/012001.

Export: BibTex EndNote

Article Metrics

Article views: 2616 Times PDF downloads: 1529 Times Cited by: 0 Times

History

Manuscript received: 20 August 2015 Manuscript revised: 16 September 2011 Online: Published: 01 January 2012

Email This Article

User name:
Email:*请输入正确邮箱
Code:*验证码错误