Influence of doping position on the extinction ratio of Mach-Zehnder-interference based silicon optical modulators

Zhao Yong; Wang Wanjun; Shao Haifeng; Yang Jianyi; Wang Minghua; Jiang Xiaoqing

doi:10.1088/1674-4926/33/1/014009

Abstract: The extinction ratio (ER) of a Mach-Zehnder-interference (MZI) based silicon optical modulator can be strongly influenced by carrier absorption. Moreover, different doping positions can induce different distributions of injected carriers, leading to different ERs. This effect has been experimentally investigated based on the devices fabricated on silicon-on-insulator (SOI) by using a 0.18 μm CMOS process. Our experiments indicate that a device with a doping position of about 0.5 μm away from the edge of the rib waveguide has optimal ER.

Key words: silicon photonics

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Zhao Y, Wang W J, Shao H F, Yang J Y, Wang M H, Jiang X Q. Influence of doping position on the extinction ratio of Mach-Zehnder-interference based silicon optical modulators[J]. J. Semicond., 2012, 33(1): 014009. doi: 10.1088/1674-4926/33/1/014009.

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