J. Semicond. > Volume 33 > Issue 7 > Article Number: 073003

Structural and optical properties of Zn-doped β-Ga2O3 films

Yue Wei , Yan Jinliang , Wu Jiangyan and Zhang Liying

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Abstract: Intrinsic β-Ga2O3 and Zn-doped β-Ga2O3 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic β-Ga2O3 films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped β-Ga2O3 films change significantly. The post-annealed β-Ga2O3 films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.

Key words: transparent conductive oxidesZn-doped β-Ga2O3optical transmittanceoptical band gapphotoluminescence

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Yue W, Yan J L, Wu J Y, Zhang L Y. Structural and optical properties of Zn-doped β-Ga2O3 films[J]. J. Semicond., 2012, 33(7): 073003. doi: 10.1088/1674-4926/33/7/073003.

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Manuscript received: 20 August 2015 Manuscript revised: 14 February 2012 Online: Published: 01 July 2012

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